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2SK1957
Silicon N Channel MOS FET
Application
High speed power switching
TO-220FM
Features
* * * * * Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC - DC converter,Motor Control
2
1
23
1
1. Gate 2. Drain 3. Source
3
Table 1 Absolute Maximum Ratings (Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 200 20 7 28 7 30 150 -55 to +150 Unit V V A A A W C C
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at Tc = 25 C
2SK1957
Table 2 Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 200 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS =160 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A VGS = 10 V * ID = 4 A VDS = 10 V * VDS = 10 V VGS = 0 f = 1 MHz ID = 4 A VGS = 10 V RL = 7.5
-------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
20 -- -- V
--------------------------------------------------------------------------------------
-- -- 2.0 -- -- -- -- 0.33 10 250 4.0 0.45 A A V
-------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
3.0 4.5 -- S
--------------------------------------------------------------------------------------
Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time * Pulse Test -- -- -- -- -- -- -- -- 700 260 45 20 45 50 35 1.1 -- -- -- -- -- -- -- -- pF pF pF ns ns ns ns V IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / s
---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- --------------------------------------------------------------------------------------
-- 150 -- ns
--------------------------------------------------------------------------------------
2SK1957
Power vs. Temperature Derating 60 Channel Dissipation Pch (W)
Maximum Safe Operation Area
ar (o ea n)
50 30 Drain Current ID (A) 10 3 1 0.3 0.1
O is pera lim ti ite on d b in y R this
DS
10
PW
10 0 s s
1
= 10
s
(1
m
s
40
D
C
O
pe
m
ra
tio
n
(T
Sh
20
c
ot
)
=
25
C
)
Ta = 25 C 3 10 30 100 300 1000
0
50 100 150 Case Temperature Tc (C)
0.05 1
Drain to Source Voltage VDS (V)
Typical Output Characteristics 10 Drain Current ID (A) 8 6 4 2 10 V 6V 5.5 V Drain Current I D (A) Pulse Test 5V 4.5 V 4V
VGS = 3.5 V
Typical Transfer Characteristics 10 8 6 4 75C 2 Tc = 25C 2 4 6 -25C Pulse Test VDS = 10 V
0
4
8
12
16
20
0
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V)
2SK1957
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 2.0 Static Drain to Source on State Resistance R DS (on) ( ) 1.6 1.2 0.8 0.4 5A
Static Drain to Source on State Resistance vs. Drain Current 10 5 2 1 0.5 0.2 0.1 0.5 15 V Pulse Test
Pulse Test
VGS = 10 V
2A I D = 1A
0
4 8 12 16 20 Gate to Source Voltage VGS (V)
1
2 5 10 20 Drain Current I D (A)
50
Static Drain to Source on State Resistance R DS (on) ( )
1.0 0.8 0.6 0.4 0.2 0 -40
Static Drain to Source on State Resistance vs. Temperature Pulse Test VGS = 10 V ID = 5 A Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs. Drain Current 50 20 10 5 2 1 0.5 0.1 Tc = 25C -25C 75C V DS = 10 V Pulse Test
1 A, 2 A
0
40
80
120
160
0.2
0.5
1
2
5
10
Case Temperature TC (C)
Drain Current I D (A)
2SK1957
Body to Drain Diode Reverse Recovery Time 500 Reverse Recovery Time t rr (ns) 200 100 50 20 10 5 0.2 di/dt = 100 A/s, VGS = 0 Ta = 25C
Typical Capacitance vs. Drain to Source Voltage 1000 Ciss Capacitance C (pF) Coss
100
10 VGS = 0 f = 1 MHz 1
Crss
0.5
1
2
5
10
20
0
Reverse Drain Current IDR (A)
10 20 30 40 50 Drain to Source Voltage VDS (V)
Dynamic Input Characteristics Drain to Source Voltage VDS (V) 500 400 300 200 100 VDD = 150 V 100 V 50 V ID = 7 A V DS VDD = 150 V 100 V 50 V 8 16 24 32 Gate Charge Qg (nc) Gate to Source Voltage VGS (V) VGS 20 16 12 8 4 0 40 500 Switching Time t (ns) 200 100 50 20 10 5
Switching Characteristics VGS = 10 V, VDD = 30 V : PW = 2 s, duty < 1% =
td (off) tf td (on) tr
0
0.1 0.2
0.5
1
2
5
10
Drain Current I D (A)

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